The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Feb. 19, 2019
Applicant:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Alexis Gauthier, Meylan, FR;

Julien Borrel, Claix, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/167 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/732 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0821 (2013.01); H01L 29/0649 (2013.01); H01L 29/167 (2013.01); H01L 29/66242 (2013.01); H01L 29/66287 (2013.01); H01L 29/732 (2013.01); H01L 29/7371 (2013.01); H01L 29/7378 (2013.01); H01L 21/26586 (2013.01);
Abstract

A bipolar junction transistor includes an extrinsic collector region buried in a semiconductor substrate under an intrinsic collector region. Carbon-containing passivating regions are provided to delimit the intrinsic collector region. An insulating layer on the intrinsic collector region includes an opening within which an extrinsic base region is provided. A semiconductor layer overlies the insulating layer, is in contact with the extrinsic base region, and includes an opening with insulated sidewalls. The collector region of the transistor is provided between the insulated sidewalls.


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