The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Feb. 27, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jong Uk Kim, Yongin-si, KR;
Jeong Hee Park, Hwaseong-si, KR;
Seong Geon Park, Seongnam-si, KR;
Soon Oh Park, Suwon-si, KR;
Jung Moo Lee, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 7/18 (2006.01); G11C 13/00 (2006.01); G11C 8/14 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 27/2427 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/148 (2013.01); H01L 45/1675 (2013.01); G11C 7/18 (2013.01); G11C 8/14 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 2213/76 (2013.01);
Abstract
A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.