The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Sep. 04, 2020
Lg Display Co., Ltd., Seoul, KR;
HyungJoon Koo, Seoul, KR;
LG DISPLAY CO., LTD., Seoul, KR;
Abstract
A thin film transistor and a method for manufacturing the same, and a display device including the same are disclosed, in which a P type semiconductor characteristic is realized using an active layer that includes a Sn based oxide. The thin film transistor comprises an active layer that includes an Sn(II)O based oxide; a metal oxide layer being in contact with one surface of the active layer; a gate electrode overlapped with the active layer; a gate insulating film provided between the gate electrode and the active layer; a source electrode being in contact with a first side of the active layer; and a drain electrode being in contact with a second side of the active layer.