The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Jun. 05, 2019
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Sung Bo Shim, Gyeonggi-do, KR;
Jung Dal Choi, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); G11C 16/16 (2006.01); H01L 21/822 (2006.01); G11C 16/34 (2006.01); H01L 23/00 (2006.01); G11C 16/30 (2006.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11573 (2017.01); H01L 27/11575 (2017.01); H01L 23/60 (2006.01); G11C 5/02 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/16 (2013.01); G11C 16/30 (2013.01); G11C 16/3445 (2013.01); H01L 21/8221 (2013.01); H01L 23/60 (2013.01); H01L 24/09 (2013.01); H01L 27/0688 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/1203 (2013.01); G11C 5/02 (2013.01); H01L 21/823475 (2013.01);
Abstract
Provided herein may be a semiconductor device. The semiconductor device may include a first substrate, a second substrate disposed on the first substrate, a stack which is disposed on the second substrate and includes stacked memory cells, and a discharge contact structure electrically coupling the second substrate with the first substrate such that charges in the second substrate are discharged to the first substrate.