The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Dec. 11, 2019
Applicant:
Littelfuse, Inc., Chicago, IL (US);
Inventor:
Elmar Wisotzki, Darmstadt, DE;
Assignee:
Littelfuse, Inc., Chicago, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 25/18 (2006.01); H01L 29/739 (2006.01); H01L 23/495 (2006.01); H01L 23/16 (2006.01); H01L 25/00 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 23/16 (2013.01); H01L 23/49562 (2013.01); H01L 25/50 (2013.01); H01L 29/7393 (2013.01); H01L 29/861 (2013.01);
Abstract
A semiconductor device module. The semiconductor device module may include a first substrate; and a semiconductor die assembly, disposed on the first substrate. The semiconductor die assembly may include a first semiconductor die, bonded to the first substrate; a second semiconductor die, disposed over the first semiconductor die; and an electrical connector, disposed between the first semiconductor die and the second semiconductor die, wherein the semiconductor die assembly comprises an insulated gate bipolar transistor (IGBT) die and a freewheeling diode die.