The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
May. 14, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jong Doo Kim, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a first normal pattern which is disposed in an active area of a semiconductor chip, wherein the first normal pattern has a particular shape and the active area includes circuitry for operating the semiconductor chip, and includes a first defective pattern and a second normal pattern which are disposed in a dummy area of the semiconductor chip, wherein the dummy area of the semiconductor chip is an area that does not perform functions for operating the semiconductor chip. The second normal pattern has the same shape as the first normal pattern and the first defective pattern has the same shape as the first normal pattern except for a first defect. The first normal pattern is disposed at a first level layer of the semiconductor chip. The first defective pattern comprises a first part and a second part, and the second normal pattern comprises a third part corresponding to the first part and that matches the first part in shape and size and a fourth part corresponding to the second part, wherein the second part includes the first defect and matches the fourth part in shape and size except for the first defect. If the second part and fourth part were to be superimposed over each other, the second part would include a piece of material that is absent from the fourth part and that comprises the first defect.