The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Oct. 14, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Naoki Takizawa, Tokyo, JP;
Tatsuyoshi Mihara, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 27/1157 (2017.01); H01L 27/11573 (2017.01); H01L 21/306 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823462 (2013.01); H01L 21/30604 (2013.01); H01L 21/82345 (2013.01); H01L 21/823437 (2013.01); H01L 27/1157 (2013.01); H01L 27/11573 (2013.01); H01L 29/40117 (2019.08); H01L 29/42344 (2013.01); H01L 29/66833 (2013.01);
Abstract
After the step of polishing, a part of each of each gate electrode is removed such that the upper surface of each gate electrode is located closer than the damaged region formed in the gate insulating film located between the gate electrodes to the main surface of the semiconductor substrate in cross-section view. Thus, it is possible to suppress the occurrence of a short-circuit defect during the operation of the semiconductor device.