The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Jul. 27, 2018
Applicant:

Comptek Solutions Oy, Turku, FI;

Inventors:

Johnny Dahl, Turku, FI;

Jouko Lang, Lieto, FI;

Vicente Calvo Alonso, Piispanristi, FI;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02546 (2013.01); H01L 21/0254 (2013.01); H01L 21/02241 (2013.01); H01L 21/02271 (2013.01); H01L 21/02389 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02458 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01); H01L 21/02483 (2013.01); H01L 21/02507 (2013.01); H01L 21/02516 (2013.01); H01L 21/02543 (2013.01); H01L 21/02565 (2013.01); H01L 21/02609 (2013.01);
Abstract

Disclosed is a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device comprises a first III-V compound semiconductor layer having a first material structure, a second semiconductor layer having a second material structure and a third semiconductor layer having a third material structure. An interface between the first semiconductor layer and the second semiconductor layer consists of at least one corresponding crystalline terminating oxide layer of the first semiconductor layer, and an interface between the second semiconductor layer and the third semiconductor layer comprises at least one corresponding crystalline terminating oxide layer of a III-V compound semiconductor layer.


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