The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Aug. 17, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Shin-Ho Oh, Yongin-si, KR;

Min-Cheol Kwon, Yongin-si, KR;

Sang-Kwon Moon, Hwaseong-si, KR;

Sang-Won Jung, Busan, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/08 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G06F 3/0604 (2013.01); G06F 3/064 (2013.01); G06F 3/0679 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01);
Abstract

A nonvolatile memory device includes multi-level cells in a memory cell array including a plurality of memory blocks, and each of the memory blocks includes a plurality of pages. A method of operating the nonvolatile memory device includes pre-programming multi-bit data in a pre-program block of the memory blocks, dividing the multi-level cells into a plurality of state groups based on state codes indicating states of the multi-level cells to generate digest data indicating state group codes corresponding to the state groups, and programming the digest data in a digest block of the memory blocks.


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