The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Dec. 01, 2017
Applicant:

Rockley Photonics Limited, London, GB;

Inventors:

Damiana Lerose, Pasadena, CA (US);

Hooman Abediasl, Pasadena, CA (US);

Amit Singh Nagra, Altadena, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/14 (2006.01); G02B 6/122 (2006.01); G02F 1/025 (2006.01); G02B 6/134 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/1347 (2013.01); G02B 6/122 (2013.01); G02F 1/025 (2013.01); G02B 2006/12097 (2013.01); G02F 2201/063 (2013.01);
Abstract

A waveguide device and method of doping a waveguide device, the waveguide device comprising a rib waveguide region, the rib waveguide region having: a base, and a ridge extending from the base, wherein: the base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; a first doped slab region extends along the first slab region; a second doped slab region extends along the second slab region; a first doped sidewall region extends along a first sidewall of the ridge and along a portion of the first slab, the first doped sidewall region being in contact with the first doped slab region at a first slab interface; and a second doped sidewall region extends along a second sidewall of the ridge and along a portion of the second slab, the second doped sidewall region being in contact with the second doped slab region at a second slab interface; and wherein the separation between the first sidewall of the ridge and the first slab interface is no more than 10 μm; and wherein the separation between the second sidewall of the ridge and the second slab interface is no more than 10 μm.


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