The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Dec. 19, 2017
Applicant:

Cambridge Enterprise Limited, Cambridge, GB;

Inventors:

Andrea De Luca, Cambridge, GB;

Florin Udrea, Cambridge, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 1/68 (2006.01); G01F 1/688 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); G01F 1/684 (2006.01); G01F 1/69 (2006.01); G01F 1/698 (2006.01); G01K 7/02 (2021.01); G01L 9/06 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 23/34 (2006.01); H01L 23/48 (2006.01); H01L 27/06 (2006.01); H01L 27/16 (2006.01); H01L 29/66 (2006.01); H01L 29/84 (2006.01); H01L 35/20 (2006.01); H01L 35/32 (2006.01); H01L 35/34 (2006.01);
U.S. Cl.
CPC ...
G01F 1/6888 (2013.01); B81B 7/0087 (2013.01); B81C 1/00246 (2013.01); G01F 1/6845 (2013.01); G01F 1/69 (2013.01); G01F 1/6986 (2013.01); G01K 7/02 (2013.01); G01L 9/065 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 23/345 (2013.01); H01L 23/481 (2013.01); H01L 27/0617 (2013.01); H01L 27/16 (2013.01); H01L 29/66075 (2013.01); H01L 29/66992 (2013.01); H01L 29/84 (2013.01); H01L 35/20 (2013.01); H01L 35/32 (2013.01); H01L 35/34 (2013.01); B81B 2201/0271 (2013.01); B81B 2203/0127 (2013.01); B81B 2207/096 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0133 (2013.01); B81C 2203/0742 (2013.01);
Abstract

A CMOS-based sensing device includes a substrate including an etched portion and a first region located on the substrate. The first region includes a membrane region formed over an area of the etched portion of the substrate, a flow sensor formed within the membrane region and a pressure sensor formed within the membrane region.


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