The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Dec. 20, 2018
Applicant:

Commissariat a L 'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Christelle Charpin-Nicolle, Fontanil-Cornillon, FR;

Remy Gassilloud, Saint Laurent du Pont, FR;

Alain Persico, St Martin d'Heres, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/768 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1608 (2013.01); G11C 11/56 (2013.01); H01L 21/76877 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/122 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1683 (2013.01);
Abstract

The present invention relates to a method for producing a via through a base layer of a microelectronic device, the method including formation of a hole leading to at least one first face of the base layer and filling the hole by at least one first filling material. The method also includes at least partially removing the at least one first filling material over a depth from the first face of the base layer, the depth being strictly less than a thickness dimension of the hole, so as to produce a hollow portion. Further, method includes a second step of at least partially filling the hollow portion by at least one second filling material.


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