The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Jul. 21, 2020
Applicant:

Playnitride Inc., Hsinchu County, TW;

Inventors:

Yu-Hung Lai, Hsinchu County, TW;

Yu-Yun Lo, Hsinchu County, TW;

Tzu-Yang Lin, Hsinchu County, TW;

Assignee:

PlayNitride Inc., Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 27/146 (2006.01); C30B 25/18 (2006.01); G09G 3/32 (2016.01); H01L 25/075 (2006.01); H01L 27/12 (2006.01); C30B 29/40 (2006.01); H01L 27/15 (2006.01); H01L 33/08 (2010.01); H01L 25/16 (2006.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); C30B 25/183 (2013.01); C30B 29/406 (2013.01); G09G 3/32 (2013.01); H01L 25/0753 (2013.01); H01L 27/1225 (2013.01); H01L 27/1259 (2013.01); H01L 27/14692 (2013.01); H01L 27/153 (2013.01); G09G 2300/0452 (2013.01); H01L 25/167 (2013.01); H01L 33/08 (2013.01); H01L 33/382 (2013.01);
Abstract

A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.


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