The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Nov. 22, 2017
Newsouth Innovations Pty Limited, Sydney, AU;
Stuart Ross Wenham, Cronulla, AU;
Alison Ciesla, Cronulla, AU;
Darren Bagnall, Coogee, AU;
Ran Chen, Botany, AU;
Malcolm David Abbott, Naremburn, AU;
Brett Jason Hallam, Bexley, AU;
Catherine Emily Chan, Kensington, AU;
Chee Mun Chong, Bellevue Hill, AU;
Daniel Chen, Bankstown, AU;
David Neil Payne, Redfern, AU;
Ly Mai, East Hills, AU;
Moonyong Kim, Kensington, AU;
Tsun Hang Fung, Kensington, AU;
Zhengrong Shi, Kirribilli, AU;
NEWSOUTH INNOVATIONS PTY LIMITED, Sydney, AU;
Abstract
The present disclosure provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or charged state to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the state of charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.