Photoelectric conversion element, photoelectric conversion module, and solar photovoltaic power generation system

Abstract

There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element () includes a semiconductor substrate (), a first semiconductor layer (), a second semiconductor layer (), a first electrode (), and a second electrode (). The first semiconductor layer has a first conductive type. The second semiconductor layer has a second conductive type. The first electrode is formed on the first semiconductor layer. The second electrode is formed on the second semiconductor layer. The first electrode includes a first transparent conductive layer () formed on the first semiconductor layer, and a first metal layer () formed on the first transparent conductive layer. The first metal layer includes a plurality of metal crystal grains in which the average crystal grain size in the in-surface direction of the first metal layer is greater than the thickness of the first metal layer.