The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Dec. 26, 2018
Applicant:

X-fab France, Corbeil Essonnes, FR;

Inventors:

Philippe Trovati, Lambesc, FR;

Nicolas Pons, Draveil, FR;

Pascal Costaganna, Chailly en Biere, FR;

Francis Domart, Mennecy, FR;

Assignee:

X-FAB FRANCE, Corbeil Essonnes, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 21/762 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78654 (2013.01); H01L 21/76243 (2013.01); H01L 29/16 (2013.01); H01L 29/4238 (2013.01); H01L 29/42384 (2013.01); H01L 29/66772 (2013.01);
Abstract

A transistor carried by a substrate comprising an active layer, the transistor comprising: at least one source area and at least one drain area; at least one electrical contact area; at least one conduction channel; at least one gate; wherein the gate comprises: a longitudinal portion; a transverse portion extending on either side of a portion of the active layer and comprising: at least a first portion extending beyond a portion of a first side of the portion of the active layer on a first extension dimension I; at least a second portion extending beyond a portion of a second side of the portion of the active layer on a second extension dimension I; and in that: I>Iwith I≠0.


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