The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Feb. 20, 2019
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventor:
Andreas Meiser, Sauerlach, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/765 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/47 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7806 (2013.01); H01L 21/049 (2013.01); H01L 21/0465 (2013.01); H01L 21/0475 (2013.01); H01L 21/0495 (2013.01); H01L 21/765 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/401 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/47 (2013.01); H01L 29/66068 (2013.01); H01L 29/7391 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01);
Abstract
A semiconductor device includes a trench structure extending from a first surface into a semiconductor body composed of silicon carbide. The trench structure includes an electrode and between the electrode and the first surface a gate electrode. A shielding region adjoining the electrode forms a first pn junction with a drift structure formed in the semiconductor body. A Schottky contact is formed between the drift structure and a first contact structure.