The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

May. 01, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yun Ki Lee, Hwaseong-si, KR;

Bumsuk Kim, Hwaseong-si, KR;

Jonghoon Park, Seoul, KR;

Junsung Park, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/05 (2014.01); H04N 5/369 (2011.01); H04N 5/378 (2011.01); H01L 31/054 (2014.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 27/1463 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H04N 5/3696 (2013.01); H01L 31/0543 (2014.12); H04N 5/378 (2013.01);
Abstract

An image sensor includes a photoelectric conversion layer including a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements adjacent to the first photoelectric conversion elements. A light shield layer shields the second photoelectric conversion elements and has respective openings therein that provide light transmission to respective ones of the first photoelectric conversion elements. The image sensor further includes an array of micro-lenses on the photoelectric conversion layer, each of the micro-lenses overlapping at least one of the first photoelectric conversion elements and at least one of the second photoelectric conversion elements.


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