The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Sep. 04, 2019
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); G11C 16/04 (2006.01); H01L 27/11573 (2017.01); G11C 16/10 (2006.01); G11C 16/08 (2006.01); H01L 27/11565 (2017.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01);
Abstract
According to one embodiment, in a semiconductor storage device, a peripheral circuit supplies a first voltage to a second region when supplying a select potential to a region corresponding to the second region, in a second conductive layer. The peripheral circuit supplies a second voltage higher than the first voltage to a first region when supplying a select potential to a region corresponding to the first region, in the second conductive layer.