The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Feb. 27, 2020
Lapis Semiconductor Co., Ltd., Kanagawa, JP;
Taku Shibaguchi, Miyagi, JP;
LAPIS SEMICONDUCTOR CO., LTD., Yokohama, JP;
Abstract
A semiconductor device includes a semiconductor substrate, and a nonvolatile memory cell disposed on the semiconductor substrate. The nonvolatile memory cell includes a field-effect transistor for data writing, and a field-effect transistor for data readout that is adjacent to the field-effect transistor for data writing. Each of the field-effect transistor for data writing and the field-effect transistor for data readout includes a gate insulating film formed on the semiconductor substrate, a floating gate formed on the gate insulating film, and diffusion layers configuring a source region and a drain region on respective sides of the floating gate viewed in the thickness direction of the semiconductor substrate. The thickness of the gate insulating film of the field-effect transistor for data readout, and the thickness of the gate insulating film of the field-effect transistor for data writing, are different.