The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Jun. 26, 2019
Sumitomo Chemical Company, Limited, Tokyo, JP;
Taiki Yamamoto, Tsukuba, JP;
Takenori Osada, Hitachi, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
A semiconductor wafer is provided, which includes a wafer; a nitride crystal layer formed of one or more crystal layers of group III nitride; and a cap layer; the wafer, the nitride crystal layer and the cap layer are positioned in an order of the wafer, the nitride crystal layer and the cap layer, and the cap layer is a silicon nitride layer having crystallinity and has a thickness of 5 nm or more. Also, a semiconductor wafer is provided, where a layer that is of the nitride crystal layer and that is in contact with the cap layer, and a layer near the layer function as active layers of a field-effect transistor, the cap layer is a silicon nitride layer having crystallinity and a thickness that is equal to or larger than a thickness in which a gate of the field-effect transistor can be embedded.