The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Nov. 07, 2018
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventor:

David Kohen, Phoenix, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/46 (2006.01); C23C 16/455 (2006.01); C30B 25/02 (2006.01); C23C 16/06 (2006.01); C30B 29/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02579 (2013.01); C23C 16/06 (2013.01); C23C 16/45553 (2013.01); C23C 16/46 (2013.01); C30B 25/02 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); C30B 29/52 (2013.01);
Abstract

A method for depositing a boron doped silicon germanium (SiGe) film is disclosed. The method may include: providing a substrate within a reaction chamber; heating the substrate to a deposition temperature; flowing a silicon precursor, a germanium precursor, and a halide gas into the reaction chamber through a first gas injector; flowing a boron dopant precursor into the reaction chamber through a second gas injector independent from the first gas injector; contacting the substrate with the silicon precursor, the germanium precursor, the halide gas and the boron dopant precursor; and depositing the boron doped silicon germanium (SiGe) film over a surface of the substrate.


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