The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Nov. 14, 2019
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Mi-Hyun Hwang, Seoul, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/406 (2006.01); G11C 11/4091 (2006.01); G11C 7/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40626 (2013.01); G11C 7/08 (2013.01); G11C 11/4091 (2013.01);
Abstract

A semiconductor memory device includes a controller for sequentially activating first and second control signals and activating a third control signal during an amplification period, in a pseudo cryogenic temperature, a first driver for driving a first power source line with a first voltage during an initial period of the amplification period, based on the first control signal, a second driver for driving the first power source line with a second voltage during a later period of the amplification period, based on the second control signal, a third driver for driving a second power source line with a third voltage during the amplification period, based on the third control signal, and a sense amplifier for primarily amplifying a voltage difference between a data line pair using the first and third voltages during the initial period, and secondarily amplifying the difference using the second and third voltages during the later period.


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