The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Nov. 13, 2018
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Shunichi Kaeriyama, Tokyo, JP;

Norio Kido, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/28 (2006.01); H02P 29/68 (2016.01); G01K 1/08 (2021.01); H02M 1/32 (2007.01); H03K 17/082 (2006.01); G01K 7/01 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
G06F 1/28 (2013.01); G01K 1/08 (2013.01); G01K 7/01 (2013.01); H02M 1/32 (2013.01); H02P 29/68 (2016.02); H03K 17/082 (2013.01); H02M 2001/327 (2013.01); H03K 2017/0806 (2013.01);
Abstract

There is to provide a power conversion device capable of estimating a junction temperature of a power transistor at a high accuracy. The control device includes a temperature estimation unit and controls the on and off of the power transistor through a driver. The voltage detection circuit detects the inter-terminal voltage of a source and drain terminals during the on-period of the power transistor. The temperature estimation unit previously holds the correlation information between the inter-terminal voltage and inter-terminal current of the source and drain terminals and the junction temperature, and estimates the junction temperature, based on the inter-terminal voltage detected by the voltage detection circuit, the known inter-terminal current, and the correlation information.


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