The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Jan. 27, 2020
Fuji Electric Co., Ltd., Kawasaki, JP;
Yuki Sawa, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A first relational expression for a temperature of a semiconductor device and forward voltage of a temperature measurement diode is obtained in advance. A second relational expression is obtained in advance for ON voltage of the semiconductor device and an amount of temperature change from a first time point before ON of the semiconductor device until a second time point after OFF of the semiconductor device. An amount of forward voltage change of the temperature measurement diode from the first time point until the second time point is obtained. Next, the amount of temperature change from the first time point until the time second point is calculated using the first relational expression and the amount of forward voltage change. An ON voltage of the MOS gate semiconductor device after correction for the calculated amount of temperature change is obtained using the second relational expression.