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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11028979 B1

PDFFull Text
Date of Patent:
Jun. 08, 2021

Filed:

Sep. 19, 2016

Lighting source using solid state emitter and phosphor materials

Applicant:

Rensselaer Polytechnic Institute, Troy, NY (US);

Inventors:

Nadarajah Narendran, Clifton Park, NY (US);

Yimin Gu, Los Gatos, CA (US);

Assignee:

Rensselaer Polytechnic Institute, Troy, NY (US);

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Bao Q Truong

Int. Cl.
CPC ...
F21K 9/64 (2016.01); H01L 33/50 (2010.01); F21V 9/32 (2018.01); F21V 9/38 (2018.01); F21V 9/45 (2018.01); F21V 13/14 (2006.01); F21K 2/00 (2006.01); F21V 9/08 (2018.01); F21V 3/02 (2006.01); F21V 5/00 (2018.01); F21V 7/06 (2006.01); H01L 25/075 (2006.01); F21Y 115/30 (2016.01); H01L 33/58 (2010.01); F21Y 113/13 (2016.01); F21Y 115/10 (2016.01);
U.S. Cl.
CPC ...
F21K 9/64 (2016.08); F21K 2/00 (2013.01); F21V 3/02 (2013.01); F21V 5/004 (2013.01); F21V 7/06 (2013.01); F21V 9/08 (2013.01); F21V 9/32 (2018.02); F21V 9/38 (2018.02); F21V 9/45 (2018.02); F21V 13/14 (2013.01); H01L 33/508 (2013.01); F21Y 2113/13 (2016.08); F21Y 2115/10 (2016.08); F21Y 2115/30 (2016.08); H01L 25/0753 (2013.01); H01L 33/507 (2013.01); H01L 33/58 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A light-emitting apparatus includes a base, a first semiconductor radiation emitting diode, having a top surface and a side wall, disposed on the base, a transparent structure disposed on the base and surrounding the side wall and covering the top surface, and a phosphor structure placed within the transparent structure surrounding the side wall and covering the top surface. The first semiconductor radiation emitting diode has a width smaller than that of the base and is configured to emit a light which can be converted into a forward transferred down-converted radiation light and a back transferred down-converted radiation light by the phosphor structure. At least a portion of the forward transferred down-converted radiation light and the back transferred down-converted radiation light are emitted toward the base.

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