The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Sep. 18, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jungah Kim, Hwaseong-si, KR;
Mihyun Park, Sungnam-si, KR;
Jinwoo Lee, Yongin-si, KR;
Keonyoung Kim, Yongin-si, KR;
Hyosan Lee, Hwaseong-si, KR;
Hoon Han, Anyang-si, KR;
Jin Uk Lee, Sejong-si, KR;
Jung Hun Lim, Daejeon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
SOULBRAIN CO., LTD., Seongnam-Si, KR;
Abstract
Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.