The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Sep. 23, 2016
Teijin Limited, Osaka, JP;
Tsukishima Kikai Co., Ltd., Tokyo, JP;
Tatsuya Ekinaka, Osaka, JP;
Tatsuichirou Kon, Osaka, JP;
Takehiro Suga, Osaka, JP;
Hiroshi Kishimoto, Osaka, JP;
Yume Morita, Osaka, JP;
Satoshi Ogata, Tokyo, JP;
Masato Nakagomi, Tokyo, JP;
TEIJIN LIMITED, Osaka, JP;
TSUKISHIMA KIKAI CO., LTD., Tokyo, JP;
Abstract
The present invention provides a polymer substrate with a hardcoat layer exhibiting excellent environmental resistance and wear resistance. A polymer substrate () is 1-20 mm thick and a hardcoat layer () on the surface thereof comprises: an underlayer cured layer () with a thickness of 1-20 μm, and including 10-90 parts by weight of a multifunctional acrylate, and 90-10 parts by weight of inorganic oxide fine particles and/or a silicon compound hydrolytic condensate; and a silicon oxide layer () which is in direct contract with the underlayer cured layer, is formed by PE-CVD with an organosilicon compound as the starter material, and satisfies all of the following conditions (a)-(c): (a) the film thickness of the silicon oxide layer is 3.5-9.0 μm; (b) the maximum indentation depth of the surface of the silicon oxide layer by nanoindentation measurement at a maximum load of 1 mN is 150 nm or less; and (c) the limit compression ratio K of the silicon oxide layer is at most 0.975 in a 3-point bending test of the polymer substrate with a hardcoat layer having been subjected to indentation deformation that causes the surface on which the silicon oxide layer is layered to be indented.