The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2021

Filed:

Feb. 28, 2020
Applicant:

Denso Corporation, Kariya, JP;

Inventors:

Megumi Suzuki, Kariya, JP;

Teruhisa Akashi, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 7/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00309 (2013.01); B81B 7/0061 (2013.01); B81B 2201/0242 (2013.01); B81B 2203/0315 (2013.01); B81B 2207/096 (2013.01); B81C 2203/019 (2013.01); B81C 2203/038 (2013.01);
Abstract

In a semiconductor device, a first substrate and a second substrate are bonded to each other through an insulating film. A hermetically sealed chamber is provided between the first substrate and the second substrate, and a sensing part is enclosed in the hermetically sealed chamber. The second substrate has a through hole penetrating in a stacking direction of the first substrate and the second substrate and exposing the first surface of the first substrate. A penetrating electrode is disposed on a wall surface of the through hole of the second substrate, and is electrically connected to the sensing part. A discharge path is provided, at a position located between the hermetically sealed chamber and the through hole for releasing outgas generated during bonding from the hermetically sealed chamber to the through hole.


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