The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Nov. 29, 2017
Applicant:

Silicon Integrated Systems Corp., Hsinchu, TW;

Inventors:

Ssu-Che Yang, Hsinchu, TW;

Wen-Chi Lin, Hsinchu, TW;

Keng-Nan Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04R 3/00 (2006.01); H04R 19/00 (2006.01); H04R 19/04 (2006.01);
U.S. Cl.
CPC ...
H04R 19/005 (2013.01); H04R 3/00 (2013.01); B81B 2201/0257 (2013.01); H04R 19/04 (2013.01);
Abstract

A sensing device comprises a charge pump, a MEMS sensor, a source follower and a PGA. The charge pump is configured to provide a pump voltage. The MEMS sensor is electrically connected to the charge pump and configured to generate an input voltage according to environment variations. The source follower is electrically connected to the MEMS sensor and configured to generate a followed reference voltage according to the pump voltage and to generate a followed input voltage according to the input voltage. The PGA has an input end of the PGA electrically connected to the source follower and is configured to generate two-ended differential output voltages outputted through a first output end and a second output end according to a difference between the followed reference voltage and the followed input voltage.


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