The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Jul. 15, 2019
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Masakazu Mimura, Nagaokakyo, JP;

Kazuhiro Takigawa, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/145 (2006.01); H01L 41/047 (2006.01); H01L 41/187 (2006.01); H03H 9/02 (2006.01); H03H 9/25 (2006.01); H03H 9/64 (2006.01); H03H 9/72 (2006.01); H03F 3/20 (2006.01); H04B 11/00 (2006.01);
U.S. Cl.
CPC ...
H03H 9/1457 (2013.01); H01L 41/0477 (2013.01); H01L 41/1873 (2013.01); H03F 3/20 (2013.01); H03H 9/02559 (2013.01); H03H 9/02818 (2013.01); H03H 9/02992 (2013.01); H03H 9/25 (2013.01); H03H 9/6489 (2013.01); H03H 9/725 (2013.01); H04B 11/00 (2013.01); H03F 2200/171 (2013.01); H03F 2200/451 (2013.01);
Abstract

An acoustic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate. In the IDT electrode, a central region, first and second low acoustic velocity regions and first and second high acoustic velocity regions are disposed in this order. A duty ratio in the first low acoustic velocity region of first electrode fingers and the second low acoustic velocity region of second electrode fingers is larger than a duty ratio in the central region. When acoustic velocity of a transversal bulk wave propagating in metal that is a main component of a main electrode layer is defined as v (m/s), v≤3299 m/s, and when a wave length defined by an electrode finger pitch of the IDT electrode is defined as λ, and a film thickness of the main electrode layer normalized by the wave length λ is defined as T, then T≥0.00018e+0.014.


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