The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Feb. 22, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Eigo Kuwata, Tokyo, JP;
Yutaro Yamaguchi, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/52 (2006.01); H03F 3/193 (2006.01); H03F 3/24 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H03F 1/52 (2013.01); H01L 29/2003 (2013.01); H01L 29/7781 (2013.01); H03F 3/193 (2013.01); H03F 3/245 (2013.01);
Abstract
When a potential difference Vbetween a source terminal of an E-type FET () and a source terminal of a D-type FET () is larger than a threshold voltage V, a protection circuit () starts an operation to reduce the potential difference Vsuch that the potential difference Vis smaller than the threshold voltage V. This makes it possible to prevent destruction of the E-type FET () even when a signal to be amplified is an RF signal.