The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
May. 07, 2020
Focaltech Electronics (Shenzhen) Co., Ltd., Shenzhen, CN;
Jun-Qiao Liu, Guangdong, CN;
FocalTech Electronics (Shenzhen) Co., Ltd., Shenzhen, CN;
Abstract
A gate driving circuit for a charge pump with slowed rates of current change for reduced EMI emissions includes at least one gate driving sub-circuit. Each gate driving sub-circuit includes a first current mirror, a first PMOS transistor, a first NMOS transistor, and a second current mirror. Gates of the first PMOS transistor and the first NMOS transistor receive a clock signal. Drains of the first PMOS transistor and the first NMOS transistor output a driving signal. When the first PMOS transistor is turned on, the first current mirror provides a charging current. When the first NMOS transistor is turned on, the second current mirror provides a discharge current.