The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Jan. 04, 2018
Applicant:

Samsung Medison Co., Ltd., Hongcheon-gun, KR;

Inventors:

Young-il Kim, Suwon-si, KR;

Jong-keun Song, Yongin-si, KR;

Tae-ho Jeon, Seoul, KR;

Min-seog Choi, Seoul, KR;

Assignee:

SAMSUNG MEDISON CO., LTD., Hongcheon-gun, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 31/00 (2006.01); H01L 41/27 (2013.01); B06B 1/06 (2006.01); G01N 29/24 (2006.01); A61B 8/00 (2006.01); G10K 11/18 (2006.01);
U.S. Cl.
CPC ...
H01L 41/27 (2013.01); A61B 8/4494 (2013.01); B06B 1/06 (2013.01); B06B 1/0607 (2013.01); B06B 1/0622 (2013.01); G01N 29/2406 (2013.01); G10K 11/18 (2013.01);
Abstract

Provided are an ultrasonic probe and a method of manufacturing the same. The method includes: forming a plurality of grooves by removing regions of a first insulating layer and a first silicon wafer from a first substrate including the first silicon wafer and the first insulating layer; bonding a second substrate including a second silicon wafer, a second insulating layer, and a silicon thin layer to the first substrate, such that the plurality of grooves turn into a plurality of cavities; removing the second silicon wafer from the second substrate; forming transducer cells on regions of the second insulating layer corresponding to the plurality of cavities; and forming a plurality of unit substrates by cutting the first substrate, the silicon thin layer, and the second insulating layer.


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