The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Dec. 10, 2019
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Tzu-Chieh Hsu, Hsinchu, TW;

Yi-Wen Huang, Hsinchu, TW;

Shou-Lung Chen, Hsinchu, TW;

Hsin-Kang Chen, Hsinchu, TW;

Assignee:

Epistar Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01S 5/02 (2006.01); H01L 33/60 (2010.01); H01L 33/20 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01); H01S 5/42 (2006.01); H01S 5/042 (2006.01); H01S 5/183 (2006.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 33/20 (2013.01); H01L 33/385 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01S 5/0216 (2013.01); H01S 5/0425 (2013.01); H01S 5/04254 (2019.08); H01S 5/04256 (2019.08); H01S 5/423 (2013.01); H01S 5/0217 (2013.01); H01S 5/04257 (2019.08); H01S 5/18305 (2013.01); H01S 5/18311 (2013.01); H01S 2301/176 (2013.01);
Abstract

The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.


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