The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Jun. 24, 2017
Applicants:

Guangdong Aiko Solar Energy Technology Co., Ltd., Guangdong, CN;

Zhejiang Aiko Solar Energy Technology Co., Ltd., Yiwu, CN;

Inventors:

Chun-Wen Lai, Foshan, CN;

Jiebin Fang, Foshan, CN;

Gang Chen, Foshan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 21/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 21/04 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02167 (2013.01); H01L 21/0209 (2013.01); H01L 21/0217 (2013.01); H01L 21/02082 (2013.01); H01L 21/02172 (2013.01); H01L 21/02299 (2013.01); H01L 21/041 (2013.01); H01L 31/0236 (2013.01); H01L 31/022441 (2013.01); H01L 31/1868 (2013.01); H01L 31/1804 (2013.01);
Abstract

A PERC solar cell capable of improving photoelectric conversion efficiency and a preparation method thereof are provided. The solar cell consecutively includes, from the bottom up, a rear silver electrode (), a rear aluminum field (), a rear silicon nitride film (), a rear aluminum oxide film (), P-type silicon (), N-type silicon (), a front silicon nitride film (), and a front silver electrode (). The rear aluminum field () is connected to the P-type silicon () via a rear aluminum strip (). The P-type silicon () is a silicon wafer of the cell. The N-type silicon () is an N-type emitter formed by diffusion via the front surface of the silicon wafer. The front silicon nitride film () is deposited on the front surface of the silicon wafer. The rear aluminum oxide film () is deposited on the rear surface of the silicon wafer. The rear aluminum oxide film () is deposited after the front silicon nitride film () is deposited on the silicon wafer, and the rear surface of the silicon wafer is washed before depositing the rear aluminum oxide film (). The cell can significantly improves passivation effect of the rear aluminum oxide film and improve the open-circuit voltage and short-circuit current of the cell, thereby increasing photoelectric conversion efficiency of the cell.


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