The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Mar. 13, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Russell Chin Yee Teo, San Jose, CA (US);
Benjamin Colombeau, San Jose, CA (US);
Assignee:
Applied Materrials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/822 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/02603 (2013.01); H01L 21/02639 (2013.01); H01L 21/28088 (2013.01); H01L 21/8221 (2013.01); H01L 27/0688 (2013.01); H01L 29/0676 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01);
Abstract
Gate all-around devices are disclosed in which an angled channel comprising a semiconducting nanostructure is located between a source and a drain. The angled channel has an axis that is oriented at an angle to the top surface of the substrate at an angle in a range of about 1° to less than about 90°. The gate all-around device is intended to meet design and performance criteria for the 7 nm technology generation.