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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11024656 B1

PDFFull Text
Date of Patent:
Jun. 01, 2021

Filed:

Jun. 21, 2017

Active matrix substrate, optical shutter substrate, display device, and method for manufacturing active matrix substrate

Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventors:

Tohru Okabe, Sakai, JP;

Hirohiko Nishiki, Sakai, JP;

Takeshi Yaneda, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, JP;

Attorney:

Keating & Bennett, LLP

Primary Examiner:

David A Zarneke

Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02B 26/02 (2006.01); G02F 1/1362 (2006.01); H01L 27/32 (2006.01); H01L 33/38 (2010.01); G02F 1/1333 (2006.01); G02F 1/1345 (2006.01); H01L 21/326 (2006.01); H01L 33/44 (2010.01); G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1244 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); G02B 26/02 (2013.01); G02F 1/1345 (2013.01); G02F 1/133302 (2021.01); G02F 1/133305 (2013.01); G02F 1/134309 (2013.01); G02F 1/134336 (2013.01); G02F 1/136286 (2013.01); H01L 21/326 (2013.01); H01L 27/3241 (2013.01); H01L 27/3244 (2013.01); H01L 27/3276 (2013.01); H01L 27/3288 (2013.01); H01L 33/382 (2013.01); H01L 33/387 (2013.01); H01L 33/44 (2013.01);
Abstract

An active matrix substrate in which step-caused disconnection of a metal film in a contact hole does not easily occur includes a first to third insulating films and first to third metal films on a glass substrate and a contact hole electrically connecting the first and second metal film, the contact hole including first to third hole present respectively in the first to third insulating films, the first and third metal films being in contact with each other inside the first hole, the second insulating film and an oxide semiconductor film overlapping with each other in a region below the third hole, the second and third metal films being in contact with each other in a region above the first insulating film and either inside or below the third hole.

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