The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Oct. 16, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Ryo Hayashi, Tokyo, JP;
Yasuhiko Akaike, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/85 (2013.01); H01L 24/05 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/4845 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/48624 (2013.01); H01L 2224/8503 (2013.01); H01L 2224/85013 (2013.01); H01L 2224/85205 (2013.01);
Abstract
The reliability of semiconductor device is improved. The method of manufacturing a semiconductor device has a step of performing plasma treatment prior to the wire bonding step, and the surface roughness of the pads after the plasma treatment step is equal to or less than 3.3 nm.