The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
May. 22, 2019
Infineon Technologies Ag, Neubiberg, DE;
Jens Peter Konrath, Villach, AT;
Jochen Hilsenbeck, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for forming a semiconductor device includes forming a mask layer with a first implantation window on a semiconductor substrate and implanting dopants with a first implantation energy into the semiconductor substrate through the first implantation window to form a first portion of a doping region of the semiconductor device. The mask layer is adapted to form a second implantation window of the mask layer. Further, dopants are implanted with a second implantation energy into the semiconductor substrate through the second implantation window. The second implantation energy differs from the first implantation energy and a lateral dimension of the first implantation window differs from a lateral dimension of the second implantation window.