The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Apr. 28, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Dmitry Lubomirsky, Cupertino, CA (US);

Xinglong Chen, San Jose, CA (US);

Shankar Venkataraman, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/455 (2006.01); H01L 21/67 (2006.01); H01L 21/3213 (2006.01); C23C 16/54 (2006.01); C23C 16/505 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32357 (2013.01); C23C 16/45565 (2013.01); C23C 16/505 (2013.01); C23C 16/54 (2013.01); H01J 37/32422 (2013.01); H01J 37/32449 (2013.01); H01J 37/32899 (2013.01); H01L 21/32136 (2013.01); H01L 21/67069 (2013.01);
Abstract

An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.


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