The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Nov. 01, 2017
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yusuke Shuto, Kanagawa, JP;

Keizo Hiraga, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/412 (2006.01); G11C 14/00 (2006.01); G11C 11/418 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/412 (2013.01); G11C 14/009 (2013.01); G11C 14/0072 (2013.01); G11C 14/0081 (2013.01); G11C 11/418 (2013.01); G11C 11/419 (2013.01);
Abstract

A semiconductor circuit according to the disclosure includes a first circuit that can generate an inverted voltage of a voltage at a first-node and apply the inverted voltage to a second-node, a second circuit that can generate an inverted voltage of the voltage at the second-node and apply the inverted voltage to the first-node, a first transistor coupling the first-node to the third-node by turning on, a first storage element having a first terminal coupled to the third-node and a second terminal supplied with a control voltage and being able to take a first or second resistance state, a first voltage setting circuit that is coupled to the third-node and can set a voltage at the third-node to a voltage corresponding to a voltage at a predetermined node out of the first and second nodes, and a driver controlling an operation of the first transistor and setting the control voltage.


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