The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Feb. 05, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Younghun Seo, Hwaseong-si, KR;

Bokyeon Won, Namyangju-si, KR;

Dongil Lee, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/4091 (2006.01); G11C 11/4076 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 11/4076 (2013.01); G11C 11/4094 (2013.01);
Abstract

Provided are a time interleaved sampling sense amplifier and a memory device including the same. The sense amplifier senses a voltage stored in the memory cell as 1-bit data or a most significant bit (MSB) and a least significant bit (LSB) of 2-bit data and latches the same to a sensing bit line and a complementary sensing bit line. The sense amplifier includes a first sense amplifier that samples a voltage change of a first bit line when the odd equalizing signal is disabled and a second sense amplifier that samples a voltage change of a second bit line when the even equalizing signal is disabled. The first sense amplifier and the second sense amplifier are alternately arranged, and the odd equalizing signal and the even equalizing signal are disabled with a certain time difference.


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