The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
May. 18, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A nonvolatile memory cell resistance change type nonvolatile memory cell configured to store information by changing an electrical resistance according to application of electrical stress is provided and a nonvolatile memory device including the nonvolatile memory cell is provided. The resistance change type nonvolatile memory cell includes a resistance change material layer including a resistance change material; a ferroelectric layer on a first side of the resistance change material layer, the ferroelectric layer configured to change an electrical resistance of the resistance change material layer according to a polarization direction and polarization size of a ferroelectric therein; a first electrode on the ferroelectric layer and configured to control the polarization direction and the polarization size of the ferroelectric based on an applied voltage; and a second electrode and a third electrode on the resistance change material layer with the first electrode therebetween.