The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

May. 29, 2018
Applicant:

Allegro Microsystems, Llc, Manchester, NH (US);

Inventors:

Rémy Lassalle-Balier, Bures sur Yvette, FR;

Jeffrey Eagen, Manchester, NH (US);

Paolo Campiglio, Arcueil, FR;

Assignee:

Allegro MicroSystems, LLC, Manchester, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/09 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); H01F 10/32 (2006.01); G01R 33/00 (2006.01); B82Y 25/00 (2011.01);
U.S. Cl.
CPC ...
G01R 33/093 (2013.01); G01R 33/0005 (2013.01); G01R 33/098 (2013.01); H01F 10/3272 (2013.01); H01F 10/3295 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); B82Y 25/00 (2013.01); H01F 10/3254 (2013.01); H01F 10/3268 (2013.01);
Abstract

A magnetoresistance (MR) element includes a first stack portion comprising a first plurality of layers including a first spacer layer having a first thickness and a first material selected to result in the first stack portion having a first sensitivity to the applied magnetic field. The MR element also has a second stack portion comprising a second plurality of layers, including a second spacer layer having a second thickness to result in the second stack portion having a second sensitivity to the applied magnetic field. The first thickness may be different than the second thickness resulting in the first sensitivity being different than the second sensitivity.


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