The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Mar. 26, 2019
Applicants:

Xiao-dong Xiang, Danville, CA (US);

Yuewei Wu, Ningbo, CN;

Xiao-ping Wang, Shanghai, CN;

Inventors:

Xiao-dong Xiang, Danville, CA (US);

Yuewei Wu, Ningbo, CN;

Xiao-ping Wang, Shanghai, CN;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 25/18 (2006.01);
U.S. Cl.
CPC ...
G01N 25/18 (2013.01);
Abstract

The invention discloses a method and a apparatus for rapid measurement of thermal conductivity of a thin film material. The apparatus comprises a control device, a clock synchronizer, a laser, a rapid thermometer and a thermal conductivity output device; the control device and the clock synchronizer are signally connected, and the clock synchronizer is simultaneously signally connected with the laser and the rapid thermometer; in the working state, the control device sends a start signal to the clock synchronizer, and the laser and the rapid thermometer coordinately cooperate, and the laser emits laser light to the surface of the sample; at the same time, the rapid thermometer captures the surface temperature of the sample at the same specified position at different time points during the heating of the sample, and inputs the measured data into the thermal conductivity output device to obtain the thermal conductivity parameter. The apparatus of the invention has simple structure. The method of the invention is efficient and accurate. It can provide reliable parameter data for the thermal properties of various current ultra-thin semiconductor films.


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