The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Feb. 12, 2019
National University of Singapore, Singapore, SG;
Yu Tong, Singapore, SG;
Chunxiang Zhu, Singapore, SG;
National University of Singapore, Singapore, SG;
Abstract
In various embodiments, a simple, robust molybdenum disulfide (MoS) based photosensor is provided that is able to detect both light intensity and wavelength. The MoSbased photosensor may be structured as a field effect transistor (FET) with a back-gate configuration, including MoSnanoflake layers, an insulating layer coated, doped substrate, and source, drain and backgate electrodes. The photoresponse of the MoSbased photosensor exhibits a fast response component that is only weakly dependent on the wavelength of light incident on the sensor and a slow response component that is strongly dependent on the wavelength of light incident on the sensor. The fast response component alone may be analyzed to determine intensity of the light, while the slow response component may be analyzed to determine the wavelength of the light.