Reactive sputtering apparatus and film formation method for composite metal compound film or mixture film using the same

Abstract

An apparatus is provided, comprising: a film formation chamber; a substrate holder provided in the film formation chamber and holding a substrate (S) to be formed with a film; a decompressor configured to reduce a pressure in the film formation chamber to a predetermined pressure; a discharge gas introducer configured to introduce a discharge gas into the film formation chamber; two or more sputtering electrodes each provided with a target (T, T) to be a film-forming material, the sputtering electrodes facing the substrate as a single substrate; a DC power source configured to supply electric power to the sputtering electrodes; two or more pulse-wave conversion switches connected between the DC power source and the sputtering electrodes, the pulse-wave conversion switches each being configured to convert a DC voltage to be applied to each of the sputtering electrodes to a pulse-wave voltage; a programmable transmitter configured to be programmable with a pulse generation control signal pattern corresponding to the electric power to be supplied to each of the sputtering electrodes, the programmable transmitter being further configured to control each of the pulse-wave conversion switches in accordance with the program; and a pulsed reactive gas introducer configured to control introduction of the reactive gas from the reactive gas introducer to the film foiniation chamber on the basis of the pulse generation control signal pattern from the electric power controller.