The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Mar. 19, 2018
Mitsubishi Gas Chemical Company, Inc., Chiyoda-ku, JP;
Shinya Saito, Okayama, JP;
Tatsuyuki Kumano, Okayama, JP;
MITSUBISHI GAS CHEMICAL COMPANY, INC., Chiyoda-ku, JP;
Abstract
An object of the present invention is to provide a method for producing cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals, from which high purity cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals are obtained. The method for producing cis,cis-1,2,4-cyclohexanetricarboxylic acid crystals of the present invention comprises the following steps: Step 1: measuring a mass ratio (cis/trans ratio) of cis,cis-1,2,4-cyclohexanetricarboxylic acid to trans,trans-1,2,4-cyclohexanetricarboxylic acid in an aqueous starting material solution comprising the cis,cis-1,2,4-cyclohexanetricarboxylic acid to give an aqueous starting material solution for crystal precipitation having a cis/trans ratio of 10 or more; and Step 2: subjecting the aqueous starting material solution for crystal precipitation obtained in step 1 to crystal precipitation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile