The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Dec. 18, 2019
Applicant:

Agc Inc., Chiyoda-ku, JP;

Inventor:

Kensuke Fujii, Tokyo, JP;

Assignee:

AGC Inc., Chiyoda-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 17/10 (2006.01); C03C 17/34 (2006.01); C03C 17/36 (2006.01); G02B 1/115 (2015.01);
U.S. Cl.
CPC ...
C03C 17/3636 (2013.01); B32B 17/10036 (2013.01); B32B 17/10174 (2013.01); C03C 17/3417 (2013.01); C03C 17/3639 (2013.01); G02B 1/115 (2013.01); C03C 2217/734 (2013.01); C03C 2218/154 (2013.01);
Abstract

Provided is an antireflective-film attached transparent substrate having a luminous transmittance of 20% to 84% and a b* value of a transmission color being 5 or smaller under a D65 light source, in which the antireflective film has a luminous reflectance being 1% or lower and a sheet resistance being 10Ω/□ or higher, and in which the antireflective film has a multilayer structure built up of at least two layers, at least one layer is constituted mainly of silicon oxide, and at least another layer is constituted mainly of a mixed oxide of at least one oxide of Mo and W and at least one oxide of Si, Nb, Ti, Zr, Ta, Al, Sn, and In, and has an extinction coefficient at 550 nm being in a range of 0.005 to 3.


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